irfz34ns/l hexfet ? power mosfet pd - 9.1311a l advanced process technology l surface mount (irfz34ns) l low-profile through-hole (irfz34nl) l 175c operating temperature l fast switching l fully avalanche rated absolute maximum ratings fifth generation hexfets from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. the d 2 pak is a surface mount power package capable of accommodating die sizes up to hex-4. it provides the highest power capability and the lowest possible on- resistance in any existing surface mount package. the d 2 pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0w in a typical surface mount application. the through-hole version (irfz34nl) is available for low- profile applications. description v dss = 55v r ds(on) = 0.040 w i d = 29a 2 d pak to-262 s d g 8/25/97 thermal resistance parameter typ. max. units r q jc junction-to-case CCCC 2.2 r q ja junction-to-ambient (pcb mount) ** CCCC 40 c/w parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v ? 29 i d @ t c = 100c continuous drain current, v gs @ 10v ? 20 a i dm pulsed drain current ?? 100 p d @t a = 25c power dissipation 3.8 w p d @t c = 25c power dissipation 68 w linear derating factor 0.45 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy ?? 130 mj i ar avalanche current ? 16 a e ar repetitive avalanche energy ? 5.6 mj dv/dt peak diode recovery dv/dt ?? 5.0 v/ns t j operating junction and -55 to + 175 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c
irfz34ns/l ** when mounted on 1" square pcb (fr-4 or g-10 material ). for recommended footprint and soldering techniques refer to application note #an-994. electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 55 CCC CCC v v gs = 0v, i d = 250a d v (br)dss / d t j breakdown voltage temp. coefficient CCC 0.052 CCC v/c reference to 25c, i d = 1ma ? r ds(on) static drain-to-source on-resistance CCC CCC 0.040 w v gs = 10v, i d = 16a ? v gs(th) gate threshold voltage 2.0 CCC 4.0 v v ds = v gs , i d = 250a g fs forward transconductance 6.5 CCC CCC s v ds = 25v, i d = 16a CCC CCC 25 v ds = 55v, v gs = 0v CCC CCC 250 v ds = 44v, v gs = 0v, t j = 150c gate-to-source forward leakage CCC CCC 100 v gs = 20v gate-to-source reverse leakage CCC CCC -100 v gs = -20v q g total gate charge CCC CCC 34 i d = 16a q gs gate-to-source charge CCC CCC 6.8 nc v ds = 44v q gd gate-to-drain ("miller") charge CCC CCC 14 v gs = 10v, see fig. 6 and 13 ?? t d(on) turn-on delay time CCC 7.0 CCC v dd = 28v t r rise time CCC 49 CCC i d = 16a t d(off) turn-off delay time CCC 31 CCC r g = 18 w t f fall time CCC 40 CCC r d = 1.8 w, see fig. 10 ?? between lead, and center of die contact c iss input capacitance CCC 700 CCC v gs = 0v c oss output capacitance CCC 240 CCC pf v ds = 25v c rss reverse transfer capacitance CCC 100 CCC ? = 1.0mhz, see fig. 5 ? i dss drain-to-source leakage current i gss ns a na nh l s internal source inductance CCC 7.5 CCC notes: ? repetitive rating; pulse width limited by max. junction temperature. ( see fig. 11 ) ? i sd 16 a, di/dt 420a/s, v dd v (br)dss , t j 175c parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) showing the i sm pulsed source current integral reverse (body diode) ? p-n junction diode. v sd diode forward voltage CCC CCC 1.6 v t j = 25c, i s = 16a, v gs = 0v ? t rr reverse recovery time CCC 57 86 ns t j = 25c, i f = 16a q rr reverse recoverycharge CCC 130 200 nc di/dt = 100a/s ?? t on forward turn-on time source-drain ratings and characteristics intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) CCC CCC 100 CCC CCC 29 a s d g ? v dd = 25v, starting t j = 25c, l = 610h r g = 25 w , i as = 16a. (see figure 12) ? pulse width 300s; duty cycle 2%. ? uses irfz34n data and test conditions
irfz34ns/l fig 3. typical transfer characteristics fig 1. typical output characteristics 1 10 100 1000 0.1 1 10 100 i , d rain-to-source c urrent (a ) d v , drain-to-source voltage (v) ds vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bott om 4.5v 20s pulse width t = 2 5c c a 4.5v 1 10 100 1000 0.1 1 10 100 i , d rain-to-source c urrent (a ) d v , drain-to-source voltage (v) ds vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bott om 4.5v a 4.5v 20s pulse w idth t = 175c c 1 10 100 45678910 t = 25c j gs v , gate-to-source voltage (v) d i , drain-to-source current (a) a v = 2 5v 20s pulse w idth t = 175c j ds 0.0 0.4 0.8 1.2 1.6 2.0 2.4 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 j t , junction tem perature (c ) r , drain-to-sou rce o n r esistan ce ds(on) (n orm alize d) v = 1 0v gs a i = 2 6a d fig 2. typical output characteristics fig 4. normalized on-resistance vs. temperature t j = 25c t j = 175c
irfz34ns/l fig 7. typical source-drain diode forward voltage fig 8. maximum safe operating area fig 5. typical capacitance vs. drain-to-source voltage fig 6. typical gate charge vs. gate-to-source voltage 0 200 400 600 800 1000 1200 1 10 100 c, capacitance (pf) ds v , drain-to-source voltage (v) a v = 0v, f = 1 mhz c = c + c , c sho rted c = c c = c + c gs iss gs gd ds rss gd oss ds gd c is s c oss c rs s 0 4 8 12 16 20 0 10203040 q , total gate charge (nc) g v , g ate-to-so urce v oltage (v ) gs a for test circuit see fig ure 13 v = 4 4v v = 2 8v ds ds i = 1 6a d 1 10 100 1000 0.4 0.8 1.2 1.6 2.0 t = 25c j v = 0 v gs v , source-to-drain voltage (v) i , reverse drain cu rren t (a) sd sd a t = 175c j 1 10 100 1000 1 10 100 v , drain-to-source voltage (v) ds i , dra in current (a ) ope ratio n in this a re a limite d by r d ds(on) 10s 100s 1ms 10ms a t = 25 c t = 17 5c single pulse c j
irfz34ns/l fig 10a. switching time test circuit + - v ds 90% 10% v gs t d(on) t r t d(off) t f v ds 10 v pulse width 1 s duty factor 0.1 % fig 9. maximum drain current vs. case temperature fig 10b. switching time waveforms r d v gs v dd r g d.u.t. fig 11. maximum effective transient thermal impedance, junction-to-case 25 50 75 100 125 150 175 0 5 10 15 20 25 30 t , case temperature ( c) i , drain current (a) c d 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
irfz34ns/l fig 12a. unclamped inductive test circuit fig 12b. unclamped inductive waveforms fig 13a. basic gate charge waveform t p v ds i as v dd v (br)dss d.u.t. v ds i d i g 3ma v gs .3 m f 50k w .2 m f 12v current regulator same type as d.u.t. current sampling resistors + - q g q gs q gd v g charge 10 v 0 50 100 150 200 250 25 50 75 100 125 150 175 j e , s ingle pulse avalanche e nergy (m j) as a starting t , junction temperature (c) v = 2 5v i to p 6.5a 11a b ot to m 16 a dd d v ds l d.u.t. v dd i as t p 0.01 w r g + - 10 v fig 13b. gate charge test circuit fig 12c. maximum avalanche energy vs. drain current
irfz34ns/l peak diode recovery dv/dt test circuit p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - fig 14. for n-channel hexfets * v gs = 5v for logic level devices ? ? ? r g v dd dv/dt controlled by r g driver same type as d.u.t. i sd controlled by duty factor "d" d.u.t. - device under test d.u.t circuit layout considerations low stray inductance ground plane low leakage inductance current transformer ? *
irfz34ns/l d 2 pak package outline d 2 pak part marking information 10.16 (.400) r e f . 6.47 (.255) 6.18 (.243) 2.61 (.103) 2.32 (.091) 8.89 (.350) r e f. - b - 1.32 (.052) 1.22 (.048) 2.79 (.110) 2.29 (.090) 1.39 (.055) 1.14 (.045) 5.28 (.208) 4.78 (.188) 4.69 (.185) 4.20 (.165) 10.54 (.415) 10.29 (.405) - a - 2 1 3 15.49 (.610) 14.73 (.580) 3x 0.93 (.037) 0.69 (.027) 5.08 (.200) 3x 1.40 (.055) 1.14 (.045) 1.78 (.070) 1.27 (.050) 1.40 (.055) max. notes: 1 dimensions after solder dip. 2 dimensioning & tolerancing per ansi y14.5m, 1982. 3 controlling dimension : inch. 4 heatsink & lead dimensions do not include burrs. 0.55 (.022) 0.46 (.018) 0.25 (.010) m b a m minimum recommended footprint 11.43 (.450) 8.89 (.350) 17.78 (.700) 3.81 (.150) 2.08 (.082) 2x lead assignm ents 1 - g at e 2 - d r a in 3 - s ou rc e 2.54 (.100) 2x part number in ter nation al rectifier logo date code (yyww ) yy = year ww = week assembly lot code f530s 9b 1m 9246 a
irfz34ns/l package outline to-262 outline to-262 part marking information
irfz34ns/l tape & reel information d 2 pak world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 322 3331 european headquarters: hurst green, oxted, surrey rh8 9bb, uk tel: ++ 44 1883 732020 ir canada: 7321 victoria park ave., suite 201, markham, ontario l3r 2z8, tel: (905) 475 1897 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 11 451 0111 ir far east: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo japan 171 tel: 81 3 3983 0086 ir southeast asia: 315 outram road, #10-02 tan boon liat building, singapore 0316 tel: 65 221 8371 http://www.irf.com/ data and specifications subject to change without notice. 8/97 3 4 4 trr feed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl feed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.0 69 ) 1.25 (.0 49 ) 11 .6 0 (.45 7 ) 11 .4 0 (.44 9 ) 15 .4 2 (.60 9 ) 15 .2 2 (.60 1 ) 4.72 (.136) 4.52 (.178) 24.30 (.957) 23.90 (.941) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 1 3.5 0 (.532 ) 1 2.8 0 (.504 ) 33 0.0 0 (14.17 3) m ax . 2 7.4 0 (1 .079 ) 2 3.9 0 (.9 41) 6 0.0 0 (2 .36 2) m in . 3 0.4 0 (1 .19 7) m a x . 26 .40 (1.03 9) 24.40 (.961) not es : 1. co mfo r ms to eia -418 . 2. co ntro llin g dim en sion : m illim eter . 3. dim ensio n m easured @ hub. 4. includes flange distortion @ outer edge.
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